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BF1012 Datasheet

Part Number BF1012
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Tetrode
Datasheet BF1012 DatasheetBF1012 Datasheet (PDF)

BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1012 Marking Ordering Code Pin Configuration MYs Q62702-F1487 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external bias.

  BF1012   BF1012






Part Number BF1012W
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Tetrode
Datasheet BF1012 DatasheetBF1012W Datasheet (PDF)

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  BF1012   BF1012







Part Number BF1012S
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Tetrode
Datasheet BF1012 DatasheetBF1012S Datasheet (PDF)

BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1627 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1012S NYs Maximum Ratings Parameter Drain-source voltage Symbol Value 16 25 10 3 200 -55 ...+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continu.

  BF1012   BF1012







Silicon N-Channel MOSFET Tetrode

BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1012 Marking Ordering Code Pin Configuration MYs Q62702-F1487 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C Storage temperature Channel temperature Symbol Value 16 25 10 3 200 -55 ...+150 150 V mW °C Unit V mA VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BF 1012 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current µA nA µA mA V VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSO .


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