BF1012S

BF 1012S Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1627 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1012S NYs Maximum Ratings Parameter Drain-source voltage Symbol Value 16 25 10 3 200 -55 ...+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -25-1998 BF 1012S Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 12 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current µA nA µA mA V VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSO VG2S(p) VDS...