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BF1101 Datasheet

Part Number BF1101
Manufacturers NXP
Logo NXP
Description N-channel dual-gate MOS-FETs
Datasheet BF1101 DatasheetBF1101 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilizati.

  BF1101   BF1101






Part Number BF1109WR
Manufacturers NXP
Logo NXP
Description N-channel dual-gate MOS-FETs
Datasheet BF1101 DatasheetBF1109WR Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Internal self-biasing circuit to ensure good cross-modulation performance .

  BF1101   BF1101







Part Number BF1109R
Manufacturers NXP
Logo NXP
Description N-channel dual-gate MOS-FETs
Datasheet BF1101 DatasheetBF1109R Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Internal self-biasing circuit to ensure good cross-modulation performance .

  BF1101   BF1101







Part Number BF1109
Manufacturers NXP
Logo NXP
Description N-channel dual-gate MOS-FETs
Datasheet BF1101 DatasheetBF1109 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Internal self-biasing circuit to ensure good cross-modulation performance .

  BF1101   BF1101







Part Number BF1108R
Manufacturers NXP
Logo NXP
Description Silicon RF switches
Datasheet BF1101 DatasheetBF1108R Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches FEATURES • Specially designed for low loss RF switching up to 1 GHz. APPLICATIONS • Various RF switching applications such as: – Passive loop through for VCR tuner – Transceiver switching. DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitchin.

  BF1101   BF1101







Part Number BF1108
Manufacturers NXP
Logo NXP
Description Silicon RF switches
Datasheet BF1101 DatasheetBF1108 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches FEATURES • Specially designed for low loss RF switching up to 1 GHz. APPLICATIONS • Various RF switching applications such as: – Passive loop through for VCR tuner – Transceiver switching. DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitchin.

  BF1101   BF1101







N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment. handbook, 2 columns 4 BF1101; BF1101R; BF1101WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1101R marking code: NCp. Fig.2 Simplified outline (SOT143R). 3 fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. 1 Top view 2 MSB014 2 Top view 1 MSB842 BF1101 marking code: NDp. BF1101WR marking code: NC. Fig.1 Simplified outline (SOT143B). Fig.3 Simplified outline (SOT343R). QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power diss.


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