DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R Dual N-channel dual gate MOS-FETs
Product spec...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R Dual N-channel dual gate MOS-FETs
Product speciļ¬cation Supersedes data of 1999 Jul 01
2000 Apr 11
Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product speciļ¬cation
BF1102; BF1102R
FEATURES
Two low noise gain controlled
amplifiers in a single package
Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
PINNING - SOT363
DESCRIPTION
PIN
BF1102
BF1102R
1 gate 1 (1)
gate 1 (1)
2 gate 2 (1 and 2) source (1 and 2)
3 drain (1)
drain (1)
4 drain (2)
drain (2)
5 source (1 and 2) gate 2 (1 and 2)
6 gate 1 (2)
gate 1 (2)
handbook, halfpage
g2 (1, 2)
DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply
voltage; integrated diodes between the gates and source protect against excessive input
voltage surges. Both devices have a SOT363 micro-miniature plastic package.
654
g1 (1)
AMP1
d (1)
g1 (2)
AMP2
d (2)
123
BF1102 marking code: W1. BF1102R marking code: W2-.
...