BF1108

DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches FEATURES Specially designed for low loss RF switching up to 1 GHz. APPLICATIONS Various RF switching applications such as: – Passive loop through for VCR tuner – Transceiver switching. DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. PINNING PIN 1 2 3 4 Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA SYMBOL s21(on)2 s21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage CONDITIONS RS = RL = 50 Ω; f ≤ 1 GHz VCS = 0; ID = 1 mA ID = 20 µA; VDS = 1 V CAUTION DESCRIPTION FET gate; diode anode diode cathode source; note 1 drain; note 1 Marking code: NHp. Marking code: NGp. 1 Top view BF1108; BF1108R handbook, 2 columns 4 3 2 MSB014 Fig.1 Simplified outline (SOT143B). handbook, 2 columns 3 4 2 Top view 1 MSB035 Fig.2 Simplified outline (SOT143R). MIN. − 30 − −...