DISCRETE SEMICONDUCTORS
DATA SHEET
BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs
Product specification Su...
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs
Product specification Supersedes data of 1999 Dec 01 2000 Mar 29
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 3 to 9 V supply
voltage, such as digital and analogue television tuners and professional communications equipment.
handbook, 2 columns 4
BF1201; BF1201R; BF1201WR
PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1
Top view
MSB035
handbook, 2 columns 3
4
2
1
BF1201R marking code: LBp
Fig.2
Simplified outline (SOT143R).
3
page
3
4
DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input
voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source
voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUT...