BF1206

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES Two low noise gain controlled amplifiers in a single package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners. DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package. AMP a BF1206 PINNING - SOT363 PIN 1 2 3 4 5 6 drain (b) source gate 1 (b) gate 1 (a) gate 2 drain (a) DESCRIPTION handbook, halfpage d (a) 5 4 g2 g1 (a) 6 AMP b 1 2 Top view 3 d (b) MAM480 s g1 (b) Marking code: L6-. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − amp. a: ID = 18 mA amp. b: ID = 12 mA Cig1-s Crss Xmod input capacitance at gate 1 reverse transfer capacit...