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BF1215
Dual N-channel dual gate MOSFET
Rev. 01 — 6 May 2010 Product data sheet
1. Product profile
...
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BF1215
Dual N-channel dual gate
MOSFET
Rev. 01 — 6 May 2010 Product data sheet
1. Product profile
1.1 General description
The BF1215 is a combination of two dual gate
MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input
voltage surges. The transistor is availiable as a SOT363 micro-miniature plastic package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Two low noise gain controlled
amplifiers in a single package; one with full internal bias and one with partial internal bias Superior cross modulation performance during AGC High forward transfer admittance to input capacitance ratio Suitable for VHF and UHF applications: both
amplifiers are optimized for VHF applications. Internal switch reduces external components
1.3 Applications
Gain controlled low noise
amplifiers for VHF and UHF applications with a 5 V supply Digital and analog television tuners Professional communication equipment
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NXP Semiconductors
BF1215
Dual N-channel dual gate
MOSFET
1.4 Quick reference data
Table 1. VDS ID Ptot |yfs| Ciss(G1) Crss NF Xmod Quick reference data for amplifie...