BF245A

NXP Semiconductors N-channel silicon field-effect transistors Product specification BF245A; BF245B; BF245C FEATURES  Interchangeability of drain and source connections  Frequencies up to 700 MHz. APPLICATIONS  LF, HF and DC amplifiers. PINNING PIN 1 2 3 SYMBOL DESCRIPTION d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage2 3 d g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MAM257 Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS Ptot yfs PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C total power dissipation forward transfer admittance Crs reverse transfer capacitance CONDITIONS ID = 10 nA; VDS = 15 V open drain VDS = 15 V; VGS = 0 Tamb = 75 C VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 C VDS = 20 V; VGS = 1 V; f = 1 MHz; Tamb = 25 C MIN.  0.25  TYP.    MAX. 30 8 30 UNIT V V V 2  6  12    3  6.5 mA 15 mA 25 mA 300 mW 6.5 mS  1.1  pF 1996 Jul 30 2 NXP Semiconductors N-channel silicon field-effect transistors Product specification BF245A; BF245B; BF245C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGDO VGSO ID IG Ptot ...