BF469

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF469/BF471 DESCRIPTION ·NPN transistors in a to-126 package ·PNP complements BF470 and BF472 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for class-B video output stages in television Receivers and for high-voltage IF output stages ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BF469 250 VCBO Collector-Base Voltage V BF471 300 BF469 250 VCEO Collector-Emitter Voltage V BF471 300 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA ICM Collector Current-Peak 100 mA IBM Base Current-Peak Ptot Total power dissipation Tmp≤114℃ TJ Junction Temperature 50 mA 1.8 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance, Junction to ambient 100 K/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BF469/BF471 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 5mA IEBO Emitter Cutoff Current IcBO Collector cut-off current hFE DC Current Gain VEB= 5V; IC=0 VcB= 200V; IE=0 VcB= 200V; IE=0,Tj=150℃ IC= 25mA ; VCE= 20V MIN TYP. MAX UNIT 0.6 V 50 nA 10 nA 10 uA 50 NOTICE： ISC reserves the rights to make changes ...