BF493S

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF493S/D High Voltage Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BF493S 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –350 –350 –6.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –250 Vdc) Emitter Cutoff Current (VEB = –6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = –250 Vdc, IE = 0, TA = 25°C) (VCB = –250 Vdc, IE = 0, TA = 100°C) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO ICBO — — –0.005 –1.0 –350 –350 –6.0 — — — — — –10 0.1 Vdc Vdc Vdc nAdc mAdc mAdc v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and D...