Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V su...
Silicon N-Channel
MOSFET Tetrode
Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply
voltage
Integrated gate protection diodes Excellent noise figure High gain, high forward transadmittance Improved cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101
BF5020...
3
4
2 1
AGC G2 HF G1 Input
RG1
VGG
Drain GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5020
SOT143 1 = S 2 = D 3 = G2 4 = G1 -
-
BF5020R
SOT143R 1 = D 2 = S 3 = G1 4 = G2 -
-
BF5020W
SOT343 1 = D 2 = S 3 = G1 4 = G2 -
-
Maximum Ratings Parameter Drain-source
voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source
voltage Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Storage temperature Channel temperature
Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot
Tstg Tch
Value 8 25
± 10 ±6
200 200 -55 ... 150 150
HF Output + DC
EHA07461
Marking KYs KYs KYs
Unit V mA mA V mW
°C
1 2009-10-01
Thermal Resistance Parameter Channel - soldering point1) BF5020, BF5020R BF5020W
Symbol Rthchs
BF5020...
Value
≤ 370 ≤ 280
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown
voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown
voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source...