BF5030W

Silicon N-Channel MOSFET Tetrode Designed for input stages of UHF- and VHF-tuners with AGC function Supporting 5 V operations and power saving 3 V operations Integrated ESD gate protection diodes Very low noise figure High gain, high forward transadmittance Very good cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101 BF5030... 3 4 2 1 AGC G2 HF G1 Input RG1 VGG Drain GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF5030 SOT143 1=S 2=D 3=G2 4=G1 - - BF5030R SOT143R 1=D 2=S 3=G1 4=G2 - - BF5030W SOT343 1=D 2=S 3=G1 4=G2 - - HF Output + DC EHA07461 Marking KXs KXs KXs 1 2009-05-05 BF5030... Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 94 °C, BF5030W TS ≤ 76 °C, BF5030, BF5030R Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) BF5030W BF5030, BF5030R Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot Tstg Tch Symbol Rthchs 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 8 25 ±1 ±6 200 200 -55 ... 150 150 Value ≤ 280 ≤ 370 Unit V mA mA V mW °C Unit K/W 2 2009-05-05 BF5030... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 2...