BF 517
NPN Silicon RF Transistor
• For amplifier and oscillator applications in TV-tuners
Type BF 517
Marking Orderin...
BF 517
NPN Silicon RF Transistor
For amplifier and oscillator applications in TV-tuners
Type BF 517
Marking Ordering Code LRs Q62702-F42
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings of any single Transistor Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Peak collector current Symbol Values 15 20 2.5 25 50 mA Unit V
VCEO VCBO VEBO IC ICM Ptot
f ≥ 10 MHz
Total power dissipation
mW 280 150 - 65 + 150 - 65 ... + 150 ≤ 340 °C
TS ≤ 55 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
1)
Tj TA Tstg RthJS
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
1
Aug-02-1996
BF 517
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown
voltage Values typ. max. Unit
V(BR)CEO
15 0.1 -
V nA 50 25 250 V 0.5
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO hFE VCEsat
VCB = 15 V, IE = 0
DC current gain
IC = 5 mA, VCE = 10 V
Collector-emitter saturation
voltage
IC = 10 mA, IB = 1 mA
AC Characteristics of any single Transistor Transition frequency
fT
1 2 0.55 0.25 1.45 0.8 -
GHz pF 0.3 0.75 0.4 dB 2.5 -
IC = 5 mA, VCE = 10 V, f = 200 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 5 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
VCE = 5 V, VBE = vbe = 0 , f = 1 MHz
Input capacitance
Cibo
-
VEB = 0.5 V, IC = ic = 0...