BF547W

DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 June 1994 Philips Semiconductors Philips Semiconductors Product specification NPN 1 GHz wideband transistor FEATURES Stable oscillator operation High current gain Good thermal stability. APPLICATIONS It is primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BF547W uses the same crystal as the SOT23 version, BF547. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, 2 columns BF547W 3 1 Top view Marking code: E2. 2 MBC870 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 63 °C; note 1 IC = 2 mA; VCE = 10 V IC = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 1 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C CONDITIONS open emitter open base − − − − 40 − 0.8 − MIN. − − − − 95 1 1.2 20 TYP. MAX. 30 20 50 300 250 − 1.6 − pF GHz dB UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage colle...