BF554

NPN Silicon RF Transistor q BF 554 For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type BF 554 Marking CC Ordering Code (tape and reel) Q62702-F1042 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 20 30 5 30 280 150 – 65 … + 150 Unit V mA mW ˚C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 554 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 1 mA, VCE = 10 V Base-emitter voltage IC = 1 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 10 V f = 200 kHz, gS = 2 mS f = 1 MHz, gS = 1.5 mS f = 100 MHz, gS = 10 mS Output conductance IC = 1 mA, VCE = 10 V, f = 0.5...10 MHz fT Ccb F – – – g22e – 1.5 1.2 3 4 – – – – µS Values typ. max. Unit V(BR) CE0 ICB0 hFE VBE 20 – 60 – – – – 0.7 – 100 250 – V nA – V – – 250...