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BF569

Vishay Telefunken

Silicon PNP Planar RF Transistor

BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for...


Vishay Telefunken

BF569

File Download Download BF569 Datasheet


Description
BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BF569 Marking: LH Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BF569R Marking: LM Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Tstg Value 40 35 3 30 200 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85000 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) BF569/BF569R Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions –VCE = 40 V, VBE = 0 –VCB = 20 V, IE = 0 –VEB = 2 V, IC = 0 –IC = 1 mA, IB = 0 –VCE = 10 V, –IC = 3 mA Symbol Min –ICES –ICBO –I...




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