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BF579 Datasheet

Part Number BF579
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon PNP Planar RF Transistor
Datasheet BF579 DatasheetBF579 Datasheet (PDF)

BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratin.

  BF579   BF579






Part Number BF579R
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon PNP Planar RF Transistor
Datasheet BF579 DatasheetBF579R Datasheet (PDF)

BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratin.

  BF579   BF579







Part Number BF570
Manufacturers NXP
Logo NXP
Description NPN medium frequency transistor
Datasheet BF579 DatasheetBF570 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF570 NPN medium frequency transistor Product data sheet Supersedes data of 2004 Jan 13 2004 Mar 15 NXP Semiconductors NPN medium frequency transistor Product data sheet BF570 FEATURES • Low current (max. 100 mA) • Low voltage (max. 15 V) • Low feedback capacitance (max. 2.2 pF). APPLICATIONS • Monitors • Battery equipped applications. DESCRIPTION NPN transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF570 MARKING CODE(1) 61* or B26 Note 1..

  BF579   BF579







Silicon PNP Planar RF Transistor

BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Tstg Value 20 20 3 25 200 150 –55 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85001 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) BF579/BF579R Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions –VCE = 20 V, VBE = 0 –VCB = 15 V, IE = 0 –VEB = 3 V, IC = 0 –IC = 1 mA, .


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