BF689K

DISCRETE SEMICONDUCTORS DATA SHEET BF689K NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PINNING PIN 1 2 3 DESCRIPTION Code: F689 emitter base collector 1 2 3 BF689K MSB034 Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency up to Tamb = 60 °C IC = 2 mA; VCE = 5 V; Tj = 25 °C IC = 20 mA; VCE = 5 V; Tj = 25 °C IC = 15 mA; VCE = 5 V; f = 500 MHz open base CONDITIONS open emitter MIN. TYP. MAX. UNIT − − − − 20 35 − − − − − − − 1.8 25 15 25 360 − − − GHz V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature tp < 1 µs up to Tamb= 60 °C open base RBE ≤ 50 Ω open collector CONDITIONS open emitter MIN. − − − − − − − −55 − MAX. 25 15 25 3.5 25 50 360 150 150 UNIT V V V V mA mA mW °C °C September 1995 2 Philips Semiconductors Product specification...