BFG196

BFG 196 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 196 BFG196 Q62702-F1292 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 100 12 mW 800 150 - 65 ... + 150 - 65 ... + 150 ≤ 75 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 90 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFG 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFG 1...