BFG197

DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES High power gain Low noise figure Gold metallization ensures excellent reliability. DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4 DESCRIPTION collector base emitter emitter collector emitter base emitter collector emitter base emitter BFG197; BFG197/X; BFG197/XR BFG197 (Fig.1) Code: V5 handbook, 2 columns 4 3 1 Top view 2 MSB014 BFG197/X (Fig.1) Code: V13 Fig.1 SOT143. BFG197A/XR (Fig.2) Code: V35 handbook, 2 columns 3 4 2 Top view 1 MSB035 Fig.2 SOT143XR. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation feedback capacitance transition frequency maximum unilateral power gain open base DC value up to Ts = 75 °C; note 1 IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 50 mA; VCE = 4 V; f = 2 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz F Note 1. TS is the temperature at the soldering point of th...