BFG 19S
NPN Silicon RF Transistor
For low noise, low distortion broadband
4
amplifiers in antenna and telecommunicat...
BFG 19S
NPN Silicon RF Transistor
For low noise, low distortion broadband
4
amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG 19S
Maximum Ratings Parameter
Marking BFG19S 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT-223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 15 20 20 3 100 12 1 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation , TS 75 °C 1) Junction temperature Ambient temperature Storage temperature
mA W °C
Thermal Resistance Junction - soldering point RthJS
75
K/W
1T is measured on the collector lead at the soldering point to the pcb S
1
Oct-26-1999
BFG 19S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown
voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit
2
Oct-26-1999
BFG 19S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by rand...
