DISCRETE SEMICONDUCTORS
M3D124
BFG21W UHF power transistor
Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • High power gain • High efficiency • 1.9 GHz operating area • Linear and non-linear operation. APPLICATIONS • Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. • Driver for DCS1800, 1900. DESCRIPTION NPN d.
UHF power transistor
DISCRETE SEMICONDUCTORS
M3D124
BFG21W UHF power transistor
Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • High power gain • High efficiency • 1.9 GHz operating area • Linear and non-linear operation. APPLICATIONS • Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. • Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.
2 Top view 1
MSB842
BFG21W
PINNING PIN 1, 3 2 4 base collector DESCRIPTION emitter
handbook, halfpage
3
4
Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION Pulsed class-AB; δ < 1 : 2; tp = 5 ms f (GHz) 1.9 VCE (V) 3.6 PL (dBm) 26 Gp (dB) ≥10 ηC (%) typ.55
1998 Jul 06
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the emitter pins. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤.