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BFG25X Datasheet

Part Number BFG25X
Manufacturers NXP
Logo NXP
Description NPN 5 GHz wideband transistor
Datasheet BFG25X DatasheetBFG25X Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 http://www.Datasheet4U.com Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with .

  BFG25X   BFG25X






Part Number BFG25AW
Manufacturers NXP
Logo NXP
Description NPN 5 GHz wideband transistors
Datasheet BFG25X DatasheetBFG25AW Datasheet (PDF)

DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistors FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial.

  BFG25X   BFG25X







Part Number BFG25A
Manufacturers NXP
Logo NXP
Description NPN 5 GHz wideband transistor
Datasheet BFG25X DatasheetBFG25A Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 http://www.Datasheet4U.com Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with .

  BFG25X   BFG25X







NPN 5 GHz wideband transistor

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 http://www.Datasheet4U.com Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: V11. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C CONDITIONS − − − − 50 3.5 − − − MIN. − − − − 80 5 18 1.8 2 TYP. MAX. 8 5 6.5 32 200 − − − − GHz dB dB dB UNIT V V mA mW 1997 Oct 29 2 http://www.Datasheet4U.com Philips Semiconductors Product specification.


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