BFG325/XR
NPN 14 GHz wideband transistor
Rev. 2 — 15 September 2011
Product data sheet
1. Product profile
1.1 General...
BFG325/XR
NPN 14 GHz wideband transistor
Rev. 2 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features and benefits
High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability
1.3 Applications
Intended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) radar detectors pagers Satellite Antenna TeleVision (SATV) tuners repeater
amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VCBO VCEO IC Ptot hFE
CCBS
collector-base
voltage open emitter
collector-emitter
voltage open base
collector current (DC)
total power dissipation DC current gain
collector-base capacitance
Tsp 90 C
IC = 15 mA; VCE = 3 V; Tj = 25 C
VCB = 5 V; f = 1 MHz; emitter grounded
fT
transition frequency
IC = 15 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 C
Min Typ Max Unit
-
-
15 V
-
-
6
V
-
-
35 mA
[1] -
-
210 mW
60 100 200
-
0.26 0.4 pF
-
14 -
GHz
NXP Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Gmax s212
NF
maximum power gain[2...