DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35 NPN 4 GHz wideband transistor
Product specification Supersedes data of 1995 S...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35 NPN 4 GHz wideband transistor
Product specification Supersedes data of 1995 Sep 12
1999 Aug 24
NXP Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35
DESCRIPTION
NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output
voltage capabilities.
PINNING
PIN 1 2 3 4
DESCRIPTION emitter base emitter collector
lfpage
4
1
Top view
23
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCEO IC Ptot hFE fT
GUM
Vo
collector-emitter
voltage
open base
DC collector current
total power dissipation DC current gain
up to Ts = 135 C (note 1) IC = 100 mA; VCE = 10 V; Tj = 25 C
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C
maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C
IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C
output
voltage
IC = 100 mA; VCE = 10 V; dim = 60 dB; RL = 75 ; f(p+qr) = 793.25 MHz; Tamb = 25 C
MIN. 25
TYP. 70 4
15
11
750
MAX. UNIT 18 V 150 mA 1W GHz
dB
dB
mV
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO VCEO VEBO IC Ptot Tstg Tj
collector-base
voltage collector-emitter
voltage emitter-base
voltage DC collector current total power dissipation storage temperature junction temperature
CONDITIONS open emitter open base open collector...