BFG403W

DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 17 GHz wideband transistor FEATURES Low current Very high power gain Low noise figure High transition frequency Very low feedback capacitance. APPLICATIONS Pager front ends RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors. 2 1 MSB842 BFG403W PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION handbook, halfpage 3 4 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Top view Marking code: P3. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT Gmax F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum power gain noise figure Ts ≤ 140 °C IC = 3 mA; VCE = 2 V; Tj = 25 °C IC = 0; VCB = 2 V; f = 1 MHz open emitter open base CONDITIONS MIN. − − − − 50 − TYP. − − 3 − 80 20 17 22 1 MAX. 10 4.5 3.6 16 120 − − − − fF GHz dB dB UNIT V V mA mW IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C − IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C − IC = 1 mA; VCE = 2 V; f = 900 MHz; ΓS = Γopt CAUTION − Th...