BFG410W

DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors NPN 22 GHz wideband transistor Product specification BFG410W FEATURES  Very high power gain  Low noise figure  High transition frequency  Emitter is thermal lead  Low feedback capacitance. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector APPLICATIONS  RF front end  Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)  Radar detectors  Pagers  Satellite television tuners (SATV)  High frequency oscillators. handbook, halfpage 34 2 Top view 1 MSB842 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Marking code: P4. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE Cre fT Gmax F collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum power gain noise figure CONDITIONS MIN. open emitter  open base   Ts  110 C  IC = 10 mA; VCE = 2 V; Tj = 25 C 50 IC = 0; VCB = 2 V; f = 1 MHz  IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C  IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C  IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt  TYP.   10  80 45 22 21 1.2 MAX. UNIT ...