BFG540XR

DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages. PINNING PIN DESCRIPTION BFG540 (Fig.1) Code: N37 1 collector 2 base 3 emitter 4 emitter BFG540/X (Fig.1) Code: N43 1 collector 2 emitter 3 base 4 emitter BFG540/XR (Fig.2) Code: N49 1 collector 2 emitter 3 base 4 emitter Product specification BFG540; BFG540/X; BFG540/XR handbook, 2 c4olumns 3 12 Top view MSB014 Fig.1 SOT143B. handbook, 2 co3lumns 4 21 Top view MSB035 Fig.2 SOT143R. September 1995 2 Philips Semiconductors NPN 9 GHz wideband transistor Product specification BFG540; BFG540/X; BFG540/XR QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCES IC Ptot hFE Cre fT collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency GUM maximum uni...