BFG590W

DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 15 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. PINNING PIN BFG590W 1 2 3 4 collector base emitter emitter MARKING TYPE NUMBER BFG590W BFG590W/X CODE T1 T2 Fig.1 SOT343N. DESCRIPTION 1 Top view 2 MBK523 page 4 3 BFG590W/X 1 2 3 4 collector emitter base emitter QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM |S21|2 PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts ≤ 85 °C IC = 70 mA; VCE = 8 V IC = 0; VCB = 8 V; f = 1 MHz IC = 80 mA; VCE = 4 V; f = 1 GHz; Tamb = 25 °C open emitter collector-emitter voltage open base CONDITIONS MIN. − − − − 60 − − TYP. MAX. UNIT − − − − 90 0.7 5 13 11 20 15 200 500 250 − − − − pF GHz dB dB V V mA mW IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C − IC = 80 mA; VCE = 4 V; f...