BFG590X

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors NPN 5 GHz wideband transistors Product specification BFG590; BFG590/X FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG590 BFG590/X CODE N38 N44 PINNING PIN 1 2 3 4 DESCRIPTION BFG590 BFG590/X collector base emitter emitter collector emitter base emitter handbook, 2 c4olumns 3 1 Top view 2 MSB014 Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE Cre fT GUM collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain |S21|2 insertion power gain CONDITIONS open emitter open base Ts ≤ 60 °C IC = 35 mA; VCE = 8 V IC = 0; VCE = 8 V; f = 1 MHz IC = 80 mA; VCE = 4 V; f = 1 GHz IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 °C MIN. − − − − 50 − − − − TYP. − − − − 9...