DATA SHEET
book, halfpage M3D071
BFG92A/X NPN 5 GHz wideband transistor
Product specification Supersedes data of 1995 S...
DATA SHEET
book, halfpage M3D071
BFG92A/X NPN 5 GHz wideband transistor
Product specification Supersedes data of 1995 Sep 12
1998 Sep 23
Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG92A/X
FEATURES High power gain Low noise figure Gold metallization ensures
excellent reliability.
APPLICATIONS Wideband applications in the UHF and microwave range.
DESCRIPTION Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package.
PINNING
PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter
handbook, 2 c4olumns
3
1 Top view
2
MSB014
Marking code: V14.
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO IC Ptot Cre fT GUM
collector-base
voltage collector-emitter
voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain
Ts ≤ 60 °C
IC = ic = 0; VCB = 10 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz
F noise figure
Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz
MIN. − − − − − 3.5 −
−
−
TYP. − − − − 0.35 5 16
11
2
MAX. 20 15 25 400 − − −
−
−
UNIT V V mA mW pF GHz dB
dB
dB
1998 Sep 23
2
Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG92A/X
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO VCEO VEBO IC Ptot Tstg Tj
collector-base voltag...