BFG92AX

DATA SHEET book, halfpage M3D071 BFG92A/X NPN 5 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1998 Sep 23 Philips Semiconductors NPN 5 GHz wideband transistor Product specification BFG92A/X FEATURES High power gain Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter handbook, 2 c4olumns 3 1 Top view 2 MSB014 Marking code: V14. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot Cre fT GUM collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 60 °C IC = ic = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz F noise figure Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz MIN. − − − − − 3.5 − − − TYP. − − − − 0.35 5 16 11 2 MAX. 20 15 25 400 − − − − − UNIT V V mA mW pF GHz dB dB dB 1998 Sep 23 2 Philips Semiconductors NPN 5 GHz wideband transistor Product specification BFG92A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltag...