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BFL4037 Datasheet

Part Number BFL4037
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet BFL4037 DatasheetBFL4037 Datasheet (PDF)

Ordering number : ENA1831 BFL4037 SANYO Semiconductors DATA SHEET BFL4037 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=0.33Ω (typ.) • Input capacitance Ciss=1200pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS IDc*1 IDpack*2 IDP PD Limi.

  BFL4037   BFL4037






Part Number BFL4037
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Silicon MOSFET
Datasheet BFL4037 DatasheetBFL4037 Datasheet (PDF)

Ordering number : ENA1831A BFL4037 N-Channel Power MOSFET 500V, 16A, 0.43Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=0.33Ω (typ.) • 10V drive • Input capacitance Ciss=1200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc*1 IDpack*2 IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperat.

  BFL4037   BFL4037







N-Channel Silicon MOSFET

Ordering number : ENA1831 BFL4037 SANYO Semiconductors DATA SHEET BFL4037 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=0.33Ω (typ.) • Input capacitance Ciss=1200pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS IDc*1 IDpack*2 IDP PD Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 500 V ±30 V 16 A 11 A 60 A 2.0 W 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 Avalanche Current *5 EAS IAV 159 mJ 16 A Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=1mH, IAV=16A (Fig.1) *5 L≤1mH, single pulse Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 4.5 2.8 Product & Package Information • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 2 3.5 7.2 16.0 16.1 3.6 0.9 1.2 0.75 123 2.55 2.55 2.4 14.0 0.6 1.2 0..


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