BFM505

DISCRETE SEMICONDUCTORS DATA SHEET BFM505 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification Dual NPN wideband transistor FEATURES Small size Temperature and hFE matched Low noise and high gain High gain at low current and low capacitance at low voltage Gold metallization ensures excellent reliability. APPLICATIONS Oscillator and buffer amplifiers Balanced amplifiers LNA/mixer. b1 6 handbook, halfpage BFM505 PINNING - SOT363A PIN 1 2 3 4 5 6 SYMBOL b1 e1 c2 b2 e2 c1 base 1 emitter 1 collector 2 base 2 emitter 2 collector 1 DESCRIPTION 5 4 c1 b2 e1 e2 MAM210 c2 DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − − 14 − − − − 1 2 3 Top view Marking code: N0. Fig.1 Simplified outline and symbol. TYP. MAX. − − − − 1.6 230 115 UNIT Any single transistor Cre fT s 21 GUM F Rth j-s 2 feedback capacitance transition frequency insertion power gain maximum unilateral power gain noise figure thermal resistance from junction to soldering point Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3V; f = 1 GHz IC = 5 mA; VCE = ...