BFN24, BFN26
NPN Silicon High-Voltage Transistors
Suitable for video output stages in TV sets and
3
switching power ...
BFN24, BFN26
NPN Silicon High-
Voltage Transistors
Suitable for video output stages in TV sets and
3
switching power supplies
High breakdown
voltage Low collector-emitter saturation
voltage Complementary types: BFN25, BFN27 (PNP)
2 1
VPS05161
Type BFN24 BFN26
Maximum Ratings Parameter
Marking FHs FJs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCEO VCBO VEBO
BFN24 250 250 5
BFN26 300 300 5
Unit V
Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
200 500 100 200 360 150 -65 ... 150
mA
mW °C
Thermal Resistance Junction - soldering point1) RthJS
210
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
BFN24, BFN26
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown
voltage IC = 1 mA, IB = 0 Collector-base breakdown
voltage IC = 100 µA, IE = 0 Emitter-base breakdown
voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter s...
