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BFN39 Datasheet

Part Number BFN39
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description PNP Silicon High-Voltage Transistors
Datasheet BFN39 DatasheetBFN39 Datasheet (PDF)

BFN37, BFN39 PNP Silicon High-Voltage Transistors  Suitabled for video output stages in TV sets and 4 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: BFN36, BFN38 (NPN) 3 2 1 VPS05163 Type BFN37 BFN39 Maximum Ratings Parameter Marking BFN 37 BFN 39 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BFN37 250 250 5 BFN39 300 300 5 Unit V Collector-emitter voltage Collector-b.

  BFN39   BFN39






Part Number BFN39
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Datasheet BFN39 DatasheetBFN39 Datasheet (PDF)

www.DataSheet4U.com SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 – JANUARY 1996 7 FEATURES: * High VCEO=300V and low VCE(sat) APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:PARTMARKING DETAIL:BFN38 BFN39 BFN39 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range.

  BFN39   BFN39







Part Number BFN39
Manufacturers Siemens Semiconductor
Logo Siemens Semiconductor
Description PNP Silicon High-Voltage Transistors
Datasheet BFN39 DatasheetBFN39 Datasheet (PDF)

PNP Silicon High-Voltage Transistors BFN 37 BFN 39 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BFN 36, BFN 38 (NPN) q Type BFN 37 BFN 39 Marking BFN 37 BFN 39 Ordering Code (tape and reel) Q62702-F1304 Q62702-F1305 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings www.DataSheet4U.com Parameter Collector-emitter voltage Collector-base voltage Emitter-b.

  BFN39   BFN39







PNP Silicon High-Voltage Transistors

BFN37, BFN39 PNP Silicon High-Voltage Transistors  Suitabled for video output stages in TV sets and 4 switching power supplies  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: BFN36, BFN38 (NPN) 3 2 1 VPS05163 Type BFN37 BFN39 Maximum Ratings Parameter Marking BFN 37 BFN 39 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BFN37 250 250 5 BFN39 300 300 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 1.5 150 -65 ... 150 mA W °C Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN37, BFN39 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V C.


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