BFP181TRW

BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain 2 1 1 2 13 653 13 566 13 654 13 566 3 4 4 3 BFP181TW Marking: W18 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter BFP181TRW Marking: WSF Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 94 9279 13 579 3 4 BFP181T Marking: 18 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Document Number 85012 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (6) BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 15 10 2 20 160 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 78 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W www.vishay.de FaxBack +1-408-970-5600 2 (6) Document Number 85012 Rev. 3, 20-Jan-99 BFP181T/BFP181TW/BFP181TRW Vishay T...