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BFP182R Datasheet

Part Number BFP182R
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Datasheet BFP182R DatasheetBFP182R Datasheet (PDF)

BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 182R RGs Q62702-F1601 1=E 2=C 3=E 4=B Package SOT-143R Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total pow.

  BFP182R   BFP182R






Part Number BFP182R
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFP182R DatasheetBFP182R Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFP182R 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP182R Marking Pin Configuration RGs 1=E 2=C 3=E 4 = B - - Package SOT143R Maximum Ratings at TA = 25 °C, unless otherwise specified .

  BFP182R   BFP182R







NPN Silicon RF Transistor

BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 182R RGs Q62702-F1601 1=E 2=C 3=E 4=B Package SOT-143R Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 ≤ 325 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 69 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Jan-21-1997 BFP 182R Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V Semiconductor Group 2 Jan-21-1997 BFP 182R Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Charact.


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