Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 1 mA ...
Low Noise Silicon Bipolar RF Transistor
For low noise, high-gain broadband
amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
BFP182W
3
4
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP182W
Marking
Pin Configuration
RGs 1=E 2=C 3=E 4 = B -
-
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation1) TS ≤ 91 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 35 4 250
150 -55 ... 150
Unit V
mA mW °C
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
235
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit K/W
1 2013-07-25
BFP182W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown
voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 ...