BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe p...
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain applications such as power
amplifiers up to 2 GHz and for linear broadband
amplifiers.
Features
D Low noise figure D High transition frequency fT = 8 GHz D Excellent large signal behaviour
2 1 1 2
13 653
13 566
13 654
13 566
3
4
4
3
BFP193TW Marking: W19 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP193TRW Marking: W91 Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
94 9279
13 579
3
4
BFP193T Marking: 193 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85015 Rev. 1, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600 1 (6)
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 80 420 150 –65 to +150 Unit V V V mA mW °C °C
Tamb ≤ 45 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 250 Unit K/W
www.vishay.de FaxBack +1-408-970-5600 2 (6...