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BFP196 Datasheet

Part Number BFP196
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFP196 DatasheetBFP196 Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP196 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP196 Marking Pin Configuratio.

  BFP196   BFP196






Part Number BFP196
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Datasheet BFP196 DatasheetBFP196 Datasheet (PDF)

BFP 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 196 RIs Q62702-F1320 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collect.

  BFP196   BFP196







Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP196 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP196 Marking Pin Configuration RIs 1 = C 2 = E 3 = B 4 = E - - Package SOT143 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 77°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg 12 20 20 2 150 15 700 150 -65 ... 150 -65 ... 150 V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 105 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-04 BFP196 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE =.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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