NPN Silicon Transistors with High Reverse Voltage
High breakdown voltage q Low collector-emitter saturation voltage q Lo...
NPN Silicon Transistors with High Reverse
Voltage
High breakdown
voltage q Low collector-emitter saturation
voltage q Low capacitance q Complementary types: BFP 23, BFP 26 (PNP)
q 1 3 2
BFP 22 BFP 25
Type BFP 22 BFP 25
Marking –
Ordering Code (tape and reel) Q62702-F621 Q62702-F721
Pin Configuration 1 2 3 E B C
Package1) TO-92
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BFP 22 200 200 6
Unit BFP 25 300 300 200 500 100 200 625 150 mW ˚C mA V
– 65 … + 150
200 135
K/W
1) 2)
For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
BFP 22 BFP 25
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown
voltage BFP 22 IC = 1 mA BFP 25 Collector-base breakdown
voltage BFP 22 IC = 100 µA BFP 25 Emitter-base breakdown
voltage IE = 100 µA Collector-base cutoff current VCB = 160 V VCB = 250 V VCB = 160 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) BFP 22 BFP 25 BFP 22 BFP 25 IEB0 hFE 25 40 50 40 V...