Low Noise Silicon Bipolar RF Transistor
• Low current device suitable e.g. for handhelds • For high frequency oscillator...
Low Noise Silicon Bipolar RF Transistor
Low current device suitable e.g. for handhelds For high frequency oscillators e.g. DRO for LNB For ISM band applications like
Automatic Meter Reading, Sensors etc. Transit frequency fT = 25 GHz Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
3 4
BFP410
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP410
Marking
Pin Configuration
AKs 1=B 2=E 3=C 4=E -
-
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter
voltage TA = 25 °C TA = -55 °C Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage
Collector current Base current Total power dissipation1) TS ≤ 100 °C Junction temperature Storage temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5 4.1 13 13 1.5 40 6 150
150 -55 ... 150
Unit V
mA mW °C
1 2013-08-16
BFP410
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 335
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown
voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85 °C (verified by random sampling)
V(BR)CEO 4.5
5
-V
ICES
nA - 1 30 - 2 50
...
