BFP460

BFP460 Low Noise Silicon Bipolar RF Transistor General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500 V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP460 Marking Pin Configuration ABs 1 = E 2 = C 3 = E 4=B - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 92°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg 1TS is measured on the collector lead at the soldering point to the pcb Value 4.5 4.2 15 15 1.5 70 7 230 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 2013-09-13 1 BFP460 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 250 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5.8 Collector-emitter cutoff current VCE = 15 V, VBE = 0 VCE = ...