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BFP520 Datasheet

Part Number BFP520
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Datasheet BFP520 DatasheetBFP520 Datasheet (PDF)

SIEGET ®45 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line Siemens Grounded Emitter Transistor 45 GHz fT - Line BFP 520 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 520 Marking Ordering Code APs Q62702-F.

  BFP520   BFP520






Part Number BFP520
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFP520 DatasheetBFP520 Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads • Qualification report according to AEC-Q101 available BFP520 3 4 2 1 ESD (Electro.

  BFP520   BFP520







NPN Silicon RF Transistor

SIEGET ®45 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line Siemens Grounded Emitter Transistor 45 GHz fT - Line BFP 520 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 520 Marking Ordering Code APs Q62702-F1794 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 105 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 2.5 12 1 40 4 100 150 -65 ...+150 -65 ...+150 Unit V V V mA mA mW °C °C °C VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS ≤ 450 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 520 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V AC characteristics Transition frequency IC = 30 mA, VCE = 2 V,.


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