Low Noise Silicon Bipolar RF Transistor
For ESD protected high gain low noise amplifier High ESD robustness
typical value 1000 V (HBM) Outstanding Gms = 21.5 dB @ 1.8 GHz
Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
BFP540ESD
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