BFP540F

BFP540F NPN Silicon RF Transistor For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 20 dB Noise Figure F = 0.9 dB Gold metallization for high reliability SIEGET to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 45 - Line A T s 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Configuration 2=E 3=C 4=E - Package TSFP-4 * Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 80°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 280 Unit K/W Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Value 4.5 14 14 1 80 8 250 150 -65 ... 150 -65 ... 150 mW °C mA Unit V 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V hFE 50 110...