BFP650F

Linear Low Noise SiGe:C Bipolar RF Transistor For medium power amplifiers and driver stages Based on Infineon' s reliable high volume Silicon Germanium technology High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads Qualification report according to AEC-Q101 available BFP650F 3 2 4 1 Top View 43 XYs 12 Direction of Unreeling ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP650F Marking Pin Configuration R5s 1=B 2=E 3=C 4=E - - Package TSFP-4 1 2013-09-06 BFP650F Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA =-55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 85°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 4 3.7 13 13 1.2 150 10 500 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 130 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5...