BFP740ESD

BFP740ESD SiGe:C NPN RF bipolar transistor Product description The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3 V, 25 mA OIP3 = 22 dBm at 5.5 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code BFP740ESD / BFP740ESDH6327XTSA1 Package SOT343 Pin Configuration Marking 1 = B 2 = E 3 = C 4 = E T7s Pieces / Reel 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP740ESD SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product desc...